Analysis of the Nonlinear and Nonstationary Response of a P-i-N Photodiode Made of a Two-Walley Semiconductor

Petar S. Matavulj

Abstract

    Usage of the high-speed photodetectors in optical communications has become a necessity today. P-i-N photodiode is one of such photodetectors. The goal of every analysis of the P-i-N photodiode is increase speed of the photodiode. It can be attained most efficiently by using "fast" semiconductor materials (two-valley semiconductors) and decreasing its dimensions.

    In this thesis, starting from both of the above facts, analysis of a P-i-N photodiode is carried out with the purpose to optimize the photodiode. Nonlinear and nonstationary response of the photodiode is analyzed by a complete phenomenological model. A Fortran program is written and used in numerical simulations. Characterization of simulated results is performed in the frequency and time domain. The described results are unique and can not be find  in literature up to now.

Key words: complete phenomenological model, nonlinear response, nonstationary response, P-i-N photodiode, two-valley semiconductor.

Save Thesis in PDF format - << 4.35 Mb >>      (Sorry, only version in Serbian is available!)