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Some Papers Published in International Journals

M. Cvetković, P. Matavulj, J. Radunović and A. Marinčić. An InGaAs P-i-N Photodiode Model: Description and Implementations in the Analysis of the 1.55µm Lightwave System (0.25Mb), Journal of Optical Communications, pp. 24-31, vol. 22, no. 1, 2001.

Petar S. Matavulj, Dušan S. Golubović, and Jovan B. Radunović. Comparison of nonlinear and nonstationary response of conventional and resonant cavity enhanced p-i-n photodiode (0.15Mb), Journal of Applied Physics, pp. 3086-3092, vol. 87, no. 6, 2000.

Dušan Golubović, Petar S. Matavulj, and Jovan B. Radunović.  Characterization and Optimization of a Resonant Cavity Enhanced P-i-N Photodiode Response (0.3Mb), International Journal of Infrared and Millimeter Waves, pp. 109-123, vol. 20, no.1, 1999.

Petar S. Matavulj, Dejan M. Gvozdić, and Jovan B. Radunović. The Influence of Nonstationary Carrier Transport on the Bandwidth of  P-i-N Photodiode (0.5Mb), IEEE/OSA  Journal of Lightwave Technology, pp. 2270-2277, vol. 15, no. 12, 1997.

P. S. Matavulj, D. M. Gvozdić, J. B. Radunović, and J. M. Elazar.  Nonlinear Pulse Response of P-I-N Photodiode Caused by the Change of the Bias Voltage (0.15Mb),   International Journal of Infrared and Millimeter Wave, pp. 1519-1528, vol. 17, no. 9, 1996.

 Some Papers Published in Proceedings of International Conferences 

 

M. Cvetković, P. Matavulj, J. B. Radunović and A. Marinčić. Analysis of the High Bit-rate 1.55µm Lightwave System with the Limited P-i-N Photodiode Bandwidth (0.18Mb), Proceedings 22nd International Conference on Microelectronics (MIEL 2000), pp. 603-606, vol. 2, Niš, Yugoslavia, 2000.

Dusan S. Golubović, Petar S. Matavulj, and Jovan B. Radunović.  Frequency Response of Resonant Cavity Enhanced P-i-N Photodiode (0.15Mb)Proceedings 23nd International Conference on Infrared and Millimeter Waves, pp. 140-141, University of Essex, Colchester, United Kindom, 1998.

P. S. Matavulj, D. M. Gvozdić, and J. B. Radunović. Analysis of the Linear and Nonlinear Time Response of a P-i-N Photodiode by a Two-Valley model (1.5Mb)Proceedings 21st International Conference on Microelectronics (MIEL'97), pp. 331-334, vol. 1, Niš, Yugoslavia, 1997.

Some Papers Published in Proceedings of National Conferences

Jovan B. Radunović and Petar S. Matavulj. Complete Equivalent Electric Circuit of Single Quantum Well Laser, Proceedings 46th ETRAN Conference (ETRAN2002), pp. 175-178, Vrućica Spa, Srpska Republic, Bosnia and Herzegovina 2002.

Petar S. Matavulj. Response Analysis of Single Quantum Well Laser, Proceedings¸46th ETRAN Conference (ETRAN2002), pp. 171-174, Vrućica Spa, Srpska Republic, Bosnia and Herzegovina 2002.

Cvetković, M., Matavulj, P., and Marincić, A. Modelling P-i-N Photodiode Time Domain Response Using the Green Function Approach, Proceedings VI Telecommunication Forum TELFOR '98, pp. 475-478, Belgrade, 1998.

D. S. Golubović, P. Matavulj, and J. Radunović. Linear Response Comparison of Conventional and RCE P-i-N PhotodiodeProceedings LVII Conference ETRAN, pp. 109-112, Vrnjačka Spa, 1998.

Full list of publications in pdf format.

Publications - full

Theses

Master Thesis

Petar S. MatavuljAnalysis of the Nonlinear and Nonstationary Response of a P-i-N Photodiode Made of a Two-Walley Semiconductor, Faculty of Electrical Engineering, Belgrade, 1997.

PhD Dissertation

Petar S. Matavulj. Contribution to the Analysis of High-Speed Single Quantum Well Laser Response: Effect of Leakage Current, Faculty of Electrical Engineering, Belgrade, 2002.

 

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