Contribution to the Analysis of High-Speed Single Quantum Well Laser Response: Effect of Leakage Current

High-speed quantum well lasers are optoelectronics devices that currently limit fast data transfer in optical communications. Consideration of the quasi-confined carriers together with confined and unconfined carriers and the leakage current is necessary for an accurate analysis of (ultra) high-speed quantum well laser response.

The main goal of the analysis presented in this thesis is the optimization and design of the single quantum well laser. The complete model based on three-valley rate equations has been used, and the whole analysis has been carried out for three different device operation modes (DC, AC, and transient) using SPICE. Particular attention has been paid to the influence of the leakage current that exists in a real device.

The numerical tool designed is a very efficient and simple tool for optimization of (ultra) high-speed quantum well lasers and at the same time convenient for direct implementation in the TCAD Driven CAD modern complex simulation packages. 

            Key words: carrier transport processes, gateway states, leakage current, single quantum well laser,
            SPICE,  three-level rate equations.

 

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